Principal Analog Mixed-Signal Design Engineer

Your Team, Your Impact
Our Broadband Analog group designs physical layer ICs for high-speed fiber optic data communication, such as Transimpedance Amplifiers (TIAs), and drivers for Silicon Photonic (SiPho) and discrete Electro-absorption Modulators (EAMs) and Mach-Zehnder Interferometer Modulators (MZMs). This group is the market leader in delivering TIAs and Drivers for Data Center and Telecom markets. We address the bandwidth, capacity and power issues faced by cloud computing and mega data center networks. Our world class group leverages our core competencies in advanced circuit design to solve the world’s ever-increasing desire to transmit more data for less power with fewer errors. We are continually first to market in Data Center, Metro and Long-Haul applications.
As a member of the design group, the candidate will be responsible for design and validation of FET and BiCMOS circuits for high-speed broadband ICs that serve these applications.
What You Can Expect
We are seeking an RF and Analog Design Engineer to contribute to the development of multi-tens of GHz Transimpedance amplifiers TIAs. These optical interface chips are tightly coupled with our high-performance equalizers. The results of our innovative designs have made our TIAs best in class for coherent long-haul and metro systems as well as PAM4 data center systems.
In this role you will be responsible for:

• Active circuit design as well as technical leadership.
• Design leading edge transimpedance amplifier design, primarily in Silicon Germanium (SiGe) BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) technology, where circuit performance will need to transcend beyond industry leading products.
• Develop transmission line structures and other millimeter wave structures to enable higher performance than would normally be achievable.
• Design of hi-performance broadband analog circuits for optical front-end receivers.
• Design of various other analog circuits including linear regulators, AGC loop, current/voltage sensors, bandgaps etc.
• Develop microarchitecture of major circuit blocks and guide team of designers to implement them. Work with various technologies including SiGe BiCMOS and CMOS.
• Work with other functional groups to facilitate post-silicon validation, qualification, transition to mass production, and customer support.

What We're Looking For
Bachelor’s degree in Electrical Engineering in the areas of design of high-performance RF/Analog Receiver/TIA design and 10 - 15 years experience Or MSc EE Or PhD EE with 5+ years of experience in the areas of design of high-performance RF/Analog Receiver/TIA design.

• Proven experience in IC design including chip tape-out AND lab evaluation of receiver design working in the industry).
• Solid experience in.
  
  • Using EDA CAD tools
  • Performing Analog Custom Layout
• Experience in measuring IC performance and debug of design to correlate simulations to measurements
• Deep understanding of fundamentals, including:
  
  • Detailed transistor level design
  • Device physics
  • Control/Feedback loop stability analysis
• Direct project experience in at least one of the following areas is a plus:
  
  • AGC loop design
  • High precision analog circuits (Including linear regulators, current sensors, bandgaps and DAC/ADC)
  • Experience in CTLE design
• Experience in Package-System integration issues desired
• Project experience in using different technologies. (SiGe BiCMOS is a plus)
• A team-player
• Experience in the following is a strong plus:
  
  • Overseeing and mentoring junior circuit designers
  • Experience as chip lead with success in silicon
  • Experience in taking chips to mass production
  • Ability to translate chip level specifications into architecture
• Strong communication, presentation and documentation skills.

Expected Base Pay Range (USD)
145,300 - 215,010, $ per annum