Components Research Memory Device Engineer Intern

Job Details:
Job Description:
Come intern with one of the largest engineering companies in the world.
Intel's Technology Development Component Research (TD CR) delivers innovative semiconductor and packaging technologies research and development. The group focuses on unique, enabling capabilities across all aspects of Intel's semiconductor processing and packaging roadmap.
Components Research engineers are responsible for leading programs to design, fabricate and analyze novel devices/interconnects/patterning, materials, and integration schemes across a wide variety of novel applications.
The Components Research (CR) team is looking for a passionate intern to join our team as a Memory Device Engineer working with CR's Device Engineers, memory experts, process engineers and circuit designers. This internship will require some level of device and circuit modeling, scientific analysis, problem solving, effective communication, and collaboration within the team. Final scoping of project will be determined based on intern experience and business needs.
The ideal candidate should exhibit the following behavioral traits:

• Highly motivated individual willing to work under pressure and deliver high quality results on time.
• Problem-solving and analytical skills.
• Effective prioritization and time management skills.
• Collaboration and tolerance for ambiguity.
• Teamwork ethics.
• Willing to work in an agile work environment with a fast-paced task flow.
• Interpersonal skills.
• Length of internship: Minimum of 3 months for summer 2024 with the possibility to extend it as per business needs.

Qualifications:
You must possess the below requirements to be initially considered for this position.
Preferred qualifications are in addition to the requirements and are considered a plus factor in identifying top candidates.
Knowledge and/or experience listed below would be obtained through a combination of your schoolwork and/or classes and/or research and/or relevant previous job and/or internship experiences.
Minimum Requirements:

• The candidate must be pursuing a PhD degree in a hard science discipline such as Electrical Engineering, Physics or related field.

Minimum of 12+ months experience in:

• Circuit design
• Operation of main memory types
• Semiconductor Device Physics

Preferred Qualifications:

• Experience of circuit power-performance analysis.
• Memory-Logic architecture
• Ferroelectrics
• Oxide semiconductors

Job Type:
Student / Intern
Shift:
Shift 1 (United States of America)
Primary Location:
US, Oregon, Hillsboro
Additional Locations:
Business group:
As the world's largest chip manufacturer, Intel strives to make every facet of semiconductor manufacturing state-of-the-art -- from semiconductor process development and manufacturing, through yield improvement to packaging, final test and optimization, and world class Supply Chain and facilities support. Employees in the Technology Development and Manufacturing Group are part of a worldwide network of design, development, manufacturing, and assembly/test facilities, all focused on utilizing the power of Moore's Law to bring smart, connected devices to every person on Earth.
Posting Statement:
All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance.
Position of Trust
N/A
Work Model for this Role
This role will be eligible for our hybrid work model which allows employees to split their time between working on-site at their assigned Intel site and off-site. In certain circumstances the work model may change to accommodate business needs.